Характеристики
IGBT MODULE, 2X1200V; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current, Ic Continuous a Max:470A; Voltage, Vce Sat Max:2.15V; Case Style:SEMiX 2s; Termination Type:Screw; Current, Ic av:470A; Current, Icm Pulsed:600A; Current, Ifs Max:1900A; Time, Rise:100ns; Voltage, Vceo:1.2V; Voltage, Vrrm:1200V